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Samsung, Hynix to jointly research on new semiconductors

(Xinhua)
Updated: 2008-09-11 17:24

SEOUL -- Samsung Electronics Co. and Hynix Semiconductor Inc., world's No. 1 and No.2 computer memory-chip maker, will jointly research on next-generation semiconductors starting from next January, the South Korea's Ministry of Knowledge Economy said Thursday.

According to the ministry, Samsung and Hynix are to make a 24 billion won ($21.8 million dollars) investment over the next four years for developing futuristic chips and various non- volatile memory devices.

The ministry said that it will support half of the planned investment.

The futuristic chips such as spin torque transfer magnetic random access memory (STT-MRAM) could help manufacturers to overcome the current 40-nanometer integration ceiling of flash memory units and provide a new potential for electronic devices, the ministry said.

Non-volatile memory devices are also considered important as they can store information even when the device is turned off.

The ministry said the newly developed technologies are to be used to get hold of 40 percent market share in the non-volatile memory market by 2012.

The cooperation by the two lartest chipmakers intends to help South Korea stay ahead in intensifying global competition with rivals in Japan and China, the ministry said.